Справочник MOSFET. IRF630SPBF

 

IRF630SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF630SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRF630SPBF

 

 

IRF630SPBF Datasheet (PDF)

 ..1. Size:981K  international rectifier
 irf630spbf.pdf

IRF630SPBF IRF630SPBF

PD - 95118IRF630SPbF Lead-Free3/17/04Document Number: 91032 www.vishay.com1IRF630SPbFDocument Number: 91032 www.vishay.com2IRF630SPbFDocument Number: 91032 www.vishay.com3IRF630SPbFDocument Number: 91032 www.vishay.com4IRF630SPbFDocument Number: 91032 www.vishay.com5IRF630SPbFDocument Number: 91032 www.vishay.com6IRF630SPbFD2Pak Package Outli

 ..2. Size:196K  vishay
 irf630spbf sihf630s.pdf

IRF630SPBF IRF630SPBF

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

 7.1. Size:85K  st
 irf630s.pdf

IRF630SPBF IRF630SPBF

IRF630S N - CHANNEL 200V - 0.35 - 9A- D2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630S 200 V

 7.2. Size:170K  vishay
 irf630s sihf630s.pdf

IRF630SPBF IRF630SPBF

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

 7.3. Size:1779K  kexin
 irf630s.pdf

IRF630SPBF IRF630SPBF

SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont

 7.4. Size:1808K  cn vbsemi
 irf630s.pdf

IRF630SPBF IRF630SPBF

IRF630Swww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.30 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleling Simpl

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