IRFZ44E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ44E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 60(max) nC
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 420 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: TO220
IRFZ44E Datasheet (PDF)
irfz44e.pdf
PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi
irfz44epbf.pdf
PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.
irfz44e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
irfz44es irfz44el.pdf
PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve
irfz44espbf.pdf
PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
irfz44espbf irfz44elpbf.pdf
PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
irfz44es.pdf
IRFZ44ESwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
irfz44es.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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