All MOSFET. IRFZ44E Datasheet

 

IRFZ44E MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ44E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 48 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO220AB

IRFZ44E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ44E Datasheet (PDF)

0.1. irfz44e.pdf Size:96K _international_rectifier

IRFZ44E
IRFZ44E

PD - 91671B IRFZ44E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

0.2. irfz44espbf.pdf Size:234K _international_rectifier

IRFZ44E
IRFZ44E

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 0.3. irfz44epbf.pdf Size:150K _international_rectifier

IRFZ44E
IRFZ44E

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

0.4. irfz44es.pdf Size:163K _international_rectifier

IRFZ44E
IRFZ44E

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature RDS(on) = 0.023Ω G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.5. irfz44e.pdf Size:246K _inchange_semiconductor

IRFZ44E
IRFZ44E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E, IIRFZ44E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

0.6. irfz44es.pdf Size:205K _inchange_semiconductor

IRFZ44E
IRFZ44E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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