IRF7205PBF - описание и поиск аналогов

IRF7205PbF l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET 2 7 S D l Surface Mount l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free Top View Description

IRF7205PbF-1 HEXFET Power MOSFET A VDS -30 V 1 8 S D RDS(on) max 2 7 0.07 S D (@V = -10V) GS 3 6 RDS(on) max S D 0.13 (@V = -4.5V) GS 4 5 G D Qg (typical) 27 nC SO-8 ID Top View -4.6 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturi

PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070 Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V) 1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 Source 5 Drain Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter

IRF7205TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top