2N6756
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N6756
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 14
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 30
nC
trⓘ -
Время нарастания: 75
ns
Cossⓘ - Выходная емкость: 500
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18
Ohm
Тип корпуса:
TO3
Аналог (замена) для 2N6756
2N6756
Datasheet (PDF)
..1. Size:147K international rectifier
2n6756 irf130.pdf 
PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process
9.1. Size:147K international rectifier
2n6758 irf230.pdf 
PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique
9.4. Size:11K semelab
2n6753.pdf 
2N6753Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 500V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.5. Size:12K semelab
2n6751.pdf 
2N6751Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.6. Size:11K semelab
2n6754.pdf 
2N6754Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 500V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.7. Size:130K inchange semiconductor
2n6753 2n6754.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3
9.8. Size:130K inchange semiconductor
2n6751 2n6752.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3
Другие MOSFET... 2N6661
, 2N6661-220M
, 2N6661JAN
, 2N6661JANTX
, 2N6661JANTXV
, 2N6661-LCC4
, 2N6661SM
, 2N6755
, AON7410
, 2N6756JAN
, 2N6756JANTX
, 2N6756JANTXV
, 2N6756JTX
, 2N6756JTXV
, 2N6757
, 2N6758
, 2N6758JAN
.
