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2N6756 Spec and Replacement


   Type Designator: 2N6756
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO3
 

 2N6756 substitution

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2N6756 Specs

 ..1. Size:147K  international rectifier
2n6756 irf130.pdf pdf_icon

2N6756

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒

 ..2. Size:136K  fairchild semi
2n6755 2n6756.pdf pdf_icon

2N6756

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 9.1. Size:147K  international rectifier
2n6758 irf230.pdf pdf_icon

2N6756

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒

 9.2. Size:141K  fairchild semi
2n6757 2n6758.pdf pdf_icon

2N6756

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Detailed specifications: 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , IRF4905 , 2N6756JAN , 2N6756JANTX , 2N6756JANTXV , 2N6756JTX , 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN .

Keywords - 2N6756 MOSFET specs

 2N6756 cross reference
 2N6756 equivalent finder
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