Справочник MOSFET. IRF7342PBF-1

 

IRF7342PBF-1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7342PBF-1
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для IRF7342PBF-1

 

 

IRF7342PBF-1 Datasheet (PDF)

 ..1. Size:178K  international rectifier
irf7342pbf-1.pdf

IRF7342PBF-1
IRF7342PBF-1

IRF7342TRPbF-1HEXFET Power MOSFETVDS -55 V1 8S1 D1RDS(on) max 0.105 2 7G1 D1(@V = -10V)GS3Qg (typical) 26 nC 6S2 D2ID 4 5-3.4 A G2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

 4.1. Size:158K  infineon
irf7342pbf.pdf

IRF7342PBF-1
IRF7342PBF-1

PD - 95200IRF7342PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual P-Channel Mosfet S1 D1VDSS = -55Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.105l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

 7.1. Size:172K  1
auirf7342q.pdf

IRF7342PBF-1
IRF7342PBF-1

PD - 97640AUTOMOTIVE GRADEAUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8S1 D1V(BR)DSS-55V 150C Operating Temperature 2 7G1 D1 Fast Switching 3 6S2 D2RDS(on) max.0.105 Fully Avalanche Rated 4 5G2 D2 Lead-Free, RoHS CompliantID-3.4ATop View Autom

 7.2. Size:136K  international rectifier
irf7342.pdf

IRF7342PBF-1
IRF7342PBF-1

PD -91859IRF7342HEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -55V2 7 Dual P-Channel MosfetG1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingRDS(on) = 0.105 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

 7.3. Size:125K  international rectifier
irf7342d2.pdf

IRF7342PBF-1
IRF7342PBF-1

PD- 94101IRF7342D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -55V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 105mS D Low VF Schottky Rectifier45G D SO-8 Footprint Schottky Vf = 0.61VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky

 7.4. Size:183K  international rectifier
irf7342qpbf.pdf

IRF7342PBF-1
IRF7342PBF-1

PD - 96109IRF7342QPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 1 8S1 D1 Dual P Channel MOSFETVDSS = -55V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 150C Operating Temperature4 5G2 D2RDS(on) = 0.105 Automotive [Q101] Qualified Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

 7.5. Size:138K  international rectifier
irf7342d2pbf.pdf

IRF7342PBF-1
IRF7342PBF-1

PD- 94101AIRF7342D2TMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -55V2 7l Ideal For Buck Regulator Applications A Kl P-Channel HEXFET3 6RDS(on) = 105mS Dl Low VF Schottky Rectifier45G Dl SO-8 Footprint Schottky Vf = 0.61VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky

 7.6. Size:267K  infineon
auirf7342q.pdf

IRF7342PBF-1
IRF7342PBF-1

AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8S1 D1Features -55V 2 7G1 D1 Advanced Planar Technology 3 6RDS(on) max. S2 D2 Low On-Resistance 0.1054 5G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS

 7.7. Size:856K  cn vbsemi
irf7342tr.pdf

IRF7342PBF-1
IRF7342PBF-1

IRF7342TRwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

 7.8. Size:2614K  cn vbsemi
irf7342qtr.pdf

IRF7342PBF-1
IRF7342PBF-1

IRF7342QTRwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

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History: SRN0765F

 

 
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