SHD226707 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SHD226707
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 29 nC
trⓘ - Время нарастания: 20 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.049 Ohm
Тип корпуса: TO-257
SHD226707 Datasheet (PDF)
shd226707.pdf
SHD226707 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4307, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.035 Ohm MOSFET Hermetically Sealed TO-257 Hermetic Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 30 Amps
shd226703.pdf
SHD226703 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4193, REV. - HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 200 Volt, 0.08 Ohm, 27A MOSFET Isolated Hermetic Metal Package Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ON-STATE DRAIN C
shd226701.pdf
SHD226701 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4188, REV. A LOW RDS(on) HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 100 Volt, 0.022 Ohm, 60A MOSFET Isolated Hermetic Metal Package Ultra Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 V
shd226403 shd226403r.pdf
SHD226403 SENSITRON SHD226403R SEMICONDUCTOR TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 200 Volt, 0.21 Ohm, 14A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Ceramic Seals available (Add a C to the part number, i.e. SHDC226403) Similar to IRFY240
shd226409.pdf
SENSITRON SHD226409 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.21 Ohm, -13A MOSFET Isolated Hermetic Metal Package Fast Switching Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLT
shd226303.pdf
SENSITRON SHD226303SEMICONDUCTORTECHNICAL DATADATA SHEET 622, REV. -HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY230MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS DR
shd226305 shd226305b.pdf
SHD226305SENSITRON SHD226305BSEMICONDUCTORTECHNICAL DATADATA SHEET 336, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 1.6 Ohm MOSFET Isolated and Hermetically Sealed Equivalent to IRFY430MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 3.7 A
shd226413.pdf
SENSITRON SHD226413SEMICONDUCTORTECHNICAL DATADATA SHEET 686, REV. -HERMETIC POWER MOSFETN-CHANNEL(PRELIMINARY)DESCRIPTION: 30 VOLT, 20 AMP, 0.02 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 15VoltsID - - 20 AmpsCONTINUOUS DRAIN CUR
shd226313.pdf
SENSITRON SHD226313SEMICONDUCTORTECHNICAL DATADATA SHEET 817, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -60 Volt, 0.4 Ohm, -18 A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on)MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID (on) -
shd226410.pdf
SENSITRON SHD226410SEMICONDUCTORTECHNICAL DATADATA SHEET 621, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -200 Volt, 0.5 Ohm, -7.7A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY9240 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTA
shd226302.pdf
SENSITRON SHD226302 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY130M MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL M
shd226405.pdf
SHD226405 SENSITRON SHD226405B SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. C HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 0.85, Ohm, 7A MOSFET Isolated Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 7 Amps
shd226408.pdf
SENSITRON SHD226408SEMICONDUCTORTECHNICAL DATADATA SHEET 472, REV -HERMETIC POWER MOSFETN-CHANNELDESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 3.9 AmpsCONTINUOUS DRAIN CURRENT @ TC = 25CID
shd226412 shd226412r.pdf
SENSITRON SHD226412 SEMICONDUCTOR SHD226412R TECHNICAL DATA DATA SHEET 370, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 100 VOLT, 33 AMP, 0.06 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 33 Amps CONTINUOUS DR
shd226401.pdf
SENSITRON SHD226401SEMICONDUCTORTECHNICAL DATADATA SHEET 581, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 60 Volt, 0.035 Ohm, 20A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY044 SeriesMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTA
shd226404.pdf
SENSITRON SHD226404 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS (on) Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP.
shd226402.pdf
SENSITRON SHD226402 SEMICONDUCTORTECHNICAL DATADATA SHEET 606, REV. AFormerly DS302, SHD2262HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.092 Ohm, 18A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY140 Series Add Suffix C to the Part Number for Ceramic SealsMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C
shd226208.pdf
SENSITRON SHD226208SEMICONDUCTORTECHNICAL DATADATA SHEET 835, REV. -HERMETIC POWER MOSFETN-CHANNELDESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 1.4 AmpsCONTINUOUS DRAIN CURRENT VGS=10
shd226314.pdf
SENSITRON SHD226314SEMICONDUCTORTECHNICAL DATADATA SHEET 816, REV. -HERMETIC POWER MOSFETN-CHANNEL, LOGIC LEVEL 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS (on) Logic Level Gate DriverMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 20* Amps
shd226309.pdf
SHD226309 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: 100 Volt, 0.31 Ohm, -9.3 A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY9130 Series Add a C to the part number for ceramic seals, SHDC226309 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATIN
shd226007.pdf
SENSITRON SHD226007SEMICONDUCTORTECHNICAL DATADATA SHEET 704, REV. -N-Channel Enhancement ModeVertical DMOS FET Free From Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-Drain Diode High Input Impedance and High GainMAXIMUM RATINGS ALL RATINGS ARE AT TA =
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