Справочник MOSFET. SIA411DJ

 

SIA411DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIA411DJ
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 3.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 8.8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 25 nC
   Время нарастания (tr): 65 ns
   Выходная емкость (Cd): 210 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
   Тип корпуса: SC-70-6L

 Аналог (замена) для SIA411DJ

 

 

SIA411DJ Datasheet (PDF)

 ..1. Size:189K  vishay
 sia411dj.pdf

SIA411DJ SIA411DJ

New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-

 9.1. Size:211K  vishay
 sia413dj.pdf

SIA411DJ SIA411DJ

SiA413DJVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material categorization:0.1

 9.2. Size:193K  vishay
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SIA411DJ SIA411DJ

SiA418DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:1230 5 nCFor definitions of compliance please see0.022 at VGS = 4.5 V 12www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS DC/DC

 9.3. Size:203K  vishay
 sia414dj.pdf

SIA411DJ SIA411DJ

SiA414DJVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAKVDS (V) RDS(on) ()ID (A)a Qg (Typ.)SC-70 Package0.011 at VGS = 4.5 V 12- Small Footprint Area Material categorization:0.013 at VGS = 2.5 V 12For definitions of compliance please see0.016 at VGS = 1.8 V 8 12 19 nC

 9.4. Size:93K  vishay
 sia417dj.pdf

SIA411DJ SIA411DJ

New ProductSiA417DJVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.031 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package0.040 at VGS = - 1.8 V - 8 - Small Footprint Area- 12a 19 nC- Low On-Res

 9.5. Size:188K  vishay
 sia415dj.pdf

SIA411DJ SIA411DJ

New ProductSiA415DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.035 at VGS = - 4.5 V - 12a- 20 15 nC New Thermally Enhanced PowerPAK RoHS0.051 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONSPowerPAK

 9.6. Size:215K  vishay
 sia413adj.pdf

SIA411DJ SIA411DJ

New ProductSiA413ADJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material cat

 9.7. Size:210K  vishay
 sia416dj.pdf

SIA411DJ SIA411DJ

SiA416DJVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.083 at VGS = 10 V 11.3100 3.5 nCFor definitions of compliance please see0.130 at VGS = 4.5 V 9www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS

 9.8. Size:92K  vishay
 sia419dj.pdf

SIA411DJ SIA411DJ

SiA419DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.030 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET0.039 at VGS = - 2.5 V - 12a New Thermally Enhanced PowerPAKSC-70 Package- 20 0.051 at VGS = - 1.8 V - 12a 17.5 nC- Small Footprint Area

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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