SIA411DJ Datasheet. Specs and Replacement
Type Designator: SIA411DJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SC-70-6L
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SIA411DJ substitution
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SIA411DJ datasheet
sia411dj.pdf
New Product SiA411DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS 0.041 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package - 20 15 nC 0.056 at VGS = - 1.8 V - Small Footprint Area - 12a - Low On-... See More ⇒
sia413dj.pdf
SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material categorization 0.1... See More ⇒
sia418dj.pdf
SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 30 5 nC For definitions of compliance please see 0.022 at VGS = 4.5 V 12 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS DC/DC... See More ⇒
sia414dj.pdf
SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SC-70 Package 0.011 at VGS = 4.5 V 12 - Small Footprint Area Material categorization 0.013 at VGS = 2.5 V 12 For definitions of compliance please see 0.016 at VGS = 1.8 V 8 12 19 nC ... See More ⇒
Detailed specifications: SHDC224701, SHDC225456, SHDC225509, SHDCG225715, SHDG225509, SIA400EDJ, SIA406DJ, SIA408DJ, 20N50, SIA413ADJ, SIA413DJ, SIA414DJ, SIA415DJ, SIA416DJ, SIA417DJ, SIA418DJ, SIA419DJ
Keywords - SIA411DJ MOSFET specs
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