SIA459EDJ - параметры транзистора MOSFET, его аналоги, datasheet

SIA459EDJ Datasheet (PDF)

..1. Size:214K vishay
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SiA459EDJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.0350 at VGS = - 4.5 V - 9- Small Footprint Area- 20 0.0395 at VGS = - 3.7 V - 9 10 nC- Low On-Resistance0.0620 at VGS = - 2.5 V - 9 100 % Rg Tested T

9.1. Size:214K vishay
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SiA453EDJwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.0185 at VGS = - 10 V - 24- Small Footprint Area0.0235 at VGS = - 4.5 V - 21- Low On-Resistance- 30 21 nC0.0260 at VGS = - 3.7 V - 20 100 % Rg and UIS Tes

9.2. Size:190K vishay
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New ProductSiA450DJVishay SiliconixN-Channel 240-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET2.9 at VGS = 10 V 1.52 New Thermally Enhanced PowerPAK RoHS2.95 at VGS = 4.5 V 240 1.5 2.54 nCCOMPLIANTSC-70 Package3.5 at VGS = 2.5 V 1.44- Small Footprint Area- Low On-ResistanceAP

9.3. Size:197K vishay
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New ProductSiA456DJVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET1.38 at VGS = 4.5 V 2.6 New Thermally Enhanced PowerPAKRoHSCOMPLIANTSC-70 Package1.50 at VGS = 2.5 V 200 2.5 5 nC- Small Footprint Area3.50 at VGS = 1.8 V 0.5- Low On-Resistance

Другие MOSFET... SIA445EDJ , SIA446DJ , SIA447DJ , SIA448DJ , SIA449DJ , SIA450DJ , SIA453EDJ , SIA456DJ , IRF730 , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , SIA485DJ , SIA519EDJ , SIA527DJ , SIA533EDJ .