SIHF18N50D - описание и поиск аналогов

SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipati

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M

SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced Switching and Conduction Losses Qg max. (nC) 58 Ultra Low Gate Charge (Qg) Qgs (nC) 6 Avalanche Energy Rated (UIS) Qgd (nC) 13