All MOSFET. SIHF18N50D Datasheet

 

SIHF18N50D Datasheet and Replacement


   Type Designator: SIHF18N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38 nC
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220FP
 

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SIHF18N50D Datasheet (PDF)

 ..1. Size:169K  vishay
 sihf18n50d.pdf pdf_icon

SIHF18N50D

SiHF18N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.28- Low Input Capacitance (Ciss)Qg (max.) (nC) 76- Reduced Capacitive Switching LossesQgs (nC) 11- High Body Diode RuggednessQgd (nC) 17- Avalanche Energy Rated (UIS)

 5.1. Size:168K  vishay
 sihf18n50c.pdf pdf_icon

SIHF18N50D

SiHP18N50C, SiHF18N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 100 % Avalanche TestedRDS(on) ()VGS = 10 V 0.225 High Peak Current CapabilityQg (Max.) (nC) 76 dV/dt RuggednessQgs (nC) 21Qgd (nC) 29 Improved trr/QrrConfiguration Single Improved Gate ChargeD High Power Dissipati

 9.1. Size:292K  vishay
 sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

SIHF18N50D

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 9.2. Size:160K  vishay
 sihf15n65e.pdf pdf_icon

SIHF18N50D

SiHF15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

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Keywords - SIHF18N50D MOSFET datasheet

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