All MOSFET. SIHF18N50D Datasheet

 

SIHF18N50D MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHF18N50D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 39 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 131 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: TO-220FP

SIHF18N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHF18N50D Datasheet (PDF)

1.1. sihf18n50c.pdf Size:168K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 • 100 % Avalanche Tested RDS(on) (Ω)VGS = 10 V 0.225 • High Peak Current Capability Qg (Max.) (nC) 76 • dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 • Improved trr/Qrr Configuration Single • Improved Gate Charge D • High Power Dissipati

1.2. sihf18n50d.pdf Size:169K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.28 - Low Input Capacitance (Ciss) Qg (max.) (nC) 76 - Reduced Capacitive Switching Losses Qgs (nC) 11 - High Body Diode Ruggedness Qgd (nC) 17 - Avalanche Energy Rated (UIS)

 5.1. sihf12n65e.pdf Size:134K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.38 • Reduced switching and conduction losses Qg max. (nC) 70 • Ultra low gate charge (Qg) Qgs (nC) 9 • Avalanche energy rated (UIS) Qgd (nC) 16 • M

5.2. sihb16n50c sihf16n50c.pdf Size:175K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ()VGS = 10 V 0.38 • 100 % Avalanche Tested Qg (Max.) (nC) 68 • Gate Charge Improved Qgs (nC) 17.6 • Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220A

 5.3. sihb12n50c sihf12n50c.pdf Size:179K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

5.4. sihf15n60e.pdf Size:136K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

 5.5. sihf15n65e.pdf Size:160K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

5.6. sihf10n40d.pdf Size:168K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7 •

5.7. sihf12n60e.pdf Size:168K _upd-mosfet

SIHF18N50D
SIHF18N50D

SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.38 • Reduced Switching and Conduction Losses Qg max. (nC) 58 • Ultra Low Gate Charge (Qg) Qgs (nC) 6 • Avalanche Energy Rated (UIS) Qgd (nC) 13 •

5.8. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay

SIHF18N50D
SIHF18N50D

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
Back to Top

 


SIHF18N50D
  SIHF18N50D
  SIHF18N50D
 

social 

LIST

Last Update

MOSFET: CHM1012TGP | CHM1012PAGP | CHM1012LPAGP | CHM09N7NGP | CHM09N6NGP | CHM06N5NGP | CHM05P03NGP | CHM05N65PAGP | CHM04N6NGP | CHM0410JGP | CHM02N7PAGP | CHM02N7NGP | CHM02N6PAGP | CHM02N6GPAGP | CHM02N6ANGP |

 

 

 
Back to Top