IRL3705N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL3705N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 170 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 89 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 98(max) nC
Время нарастания (tr): 140 ns
Выходная емкость (Cd): 870 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: TO220
IRL3705N Datasheet (PDF)
irl3705npbf.pdf
PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *
irl3705n.pdf
PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irl3705npbf.pdf
PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *
irl3705n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irl3705nspbf irl3705nlpbf.pdf
PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS
auirl3705n.pdf
PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSp
irl3705ns irl3705nl.pdf
PD - 91502CIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq
irl3705ns.pdf
isc N-Channel MOSFET Transistor IRL3705NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irl3705nl.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRL3705NLFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Другие MOSFET... IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S , IRL3502 , IRL3502S , IRF2807 , IRL3705NL , IRL3705NS , IRL3803 , IRL3803L , IRL3803S , IRL510 , IRL510A , IRL511 .
Список транзисторов
Обновления
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