All MOSFET. IRL3705N Datasheet

 

IRL3705N Datasheet and Replacement


   Type Designator: IRL3705N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

 IRL3705N substitution

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IRL3705N Datasheet (PDF)

 ..1. Size:481K  international rectifier
irl3705npbf.pdf pdf_icon

IRL3705N

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

 ..2. Size:106K  international rectifier
irl3705n.pdf pdf_icon

IRL3705N

PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 ..3. Size:251K  inchange semiconductor
irl3705n.pdf pdf_icon

IRL3705N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:297K  international rectifier
irl3705nspbf irl3705nlpbf.pdf pdf_icon

IRL3705N

PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS

Datasheet: IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S , IRL3502 , IRL3502S , TK10A60D , IRL3705NL , IRL3705NS , IRL3803 , IRL3803L , IRL3803S , IRL510 , IRL510A , IRL511 .

Keywords - IRL3705N MOSFET datasheet

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