Справочник MOSFET. 2SJ303

 

2SJ303 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ303
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 670 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SJ303

 

 

2SJ303 Datasheet (PDF)

 ..1. Size:435K  nec
 2sj303.pdf

2SJ303 2SJ303

 9.1. Size:335K  toshiba
 2sj305.pdf

2SJ303 2SJ303

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small packa

 9.2. Size:379K  toshiba
 2sj304.pdf

2SJ303 2SJ303

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

 9.3. Size:96K  sanyo
 2sj308.pdf

2SJ303 2SJ303

Ordering number:EN4318P-Channel Silicon MOSFET2SJ308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ308] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

 9.4. Size:115K  sanyo
 2sj307.pdf

2SJ303 2SJ303

Ordering number:EN4317AP-Channel Silicon MOSFET2SJ307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ307] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T

 9.5. Size:94K  sanyo
 2sj306.pdf

2SJ303 2SJ303

Ordering number:EN4316P-Channel Silicon MOSFET2SJ306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ306] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

 9.6. Size:440K  nec
 2sj302.pdf

2SJ303 2SJ303

 9.7. Size:442K  nec
 2sj302-z.pdf

2SJ303 2SJ303

 9.8. Size:1885K  kexin
 2sj302-zj.pdf

2SJ303 2SJ303

SMD Type MOSFETP-Channel MOSFET2SJ302-ZJ Features VDS (V) =-60V ID =-16 A RDS(ON) 100m (VGS =-10V) RDS(ON) 240m (VGS =-4V) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16A Pulsed Drain Current (Note.1) IDM -64 Power Dissi

Другие MOSFET... 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , 4N60 , 2SJ324 , 2SJ325 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 .

 

 
Back to Top