2SJ303 Datasheet. Specs and Replacement
Type Designator: 2SJ303 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220F
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2SJ303 substitution
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2SJ303 datasheet
2sj305.pdf
2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit mm Analog Applications High input impedance Low gate threshold voltage. V = -0.5 -1.5 V th Excellent switching times. t = 0.06 s (typ.) on t = 0.15 s (typ.) off Low drain-source ON resistance R = 2.4 (typ.) DS (ON) Small packa... See More ⇒
2sj304.pdf
2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-m... See More ⇒
2sj308.pdf
Ordering number EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-... See More ⇒
Detailed specifications: 2SJ208, 2SJ209, 2SJ210, 2SJ211, 2SJ212, 2SJ218, 2SJ243, 2SJ302, IRFB3607, 2SJ324, 2SJ325, 2SJ326, 2SJ327, 2SJ328, 2SJ329, 2SJ330, 2SJ331
Keywords - 2SJ303 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: IPB093N04LG
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