All MOSFET. 2SJ303 Datasheet

 

2SJ303 Datasheet and Replacement


   Type Designator: 2SJ303
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F
 

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2SJ303 Datasheet (PDF)

 ..1. Size:435K  nec
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2SJ303

 9.1. Size:335K  toshiba
2sj305.pdf pdf_icon

2SJ303

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small packa

 9.2. Size:379K  toshiba
2sj304.pdf pdf_icon

2SJ303

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

 9.3. Size:96K  sanyo
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2SJ303

Ordering number:EN4318P-Channel Silicon MOSFET2SJ308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ308] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

Datasheet: 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , IRFP250 , 2SJ324 , 2SJ325 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 .

History: 2SJ324

Keywords - 2SJ303 MOSFET datasheet

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