2SJ303 PDF and Equivalents Search

 

2SJ303 Specs and Replacement

Type Designator: 2SJ303

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 670 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220F

2SJ303 substitution

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2SJ303 datasheet

 ..1. Size:435K  nec
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2SJ303

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 9.1. Size:335K  toshiba
2sj305.pdf pdf_icon

2SJ303

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit mm Analog Applications High input impedance Low gate threshold voltage. V = -0.5 -1.5 V th Excellent switching times. t = 0.06 s (typ.) on t = 0.15 s (typ.) off Low drain-source ON resistance R = 2.4 (typ.) DS (ON) Small packa... See More ⇒

 9.2. Size:379K  toshiba
2sj304.pdf pdf_icon

2SJ303

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-m... See More ⇒

 9.3. Size:96K  sanyo
2sj308.pdf pdf_icon

2SJ303

Ordering number EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-... See More ⇒

Detailed specifications: 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , IRF1010E , 2SJ324 , 2SJ325 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 .

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