SIHFPF40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFPF40
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 120 nC
trⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO-247AC
SIHFPF40 Datasheet (PDF)
irfpf40 sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf40pbf sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf40 sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf50 sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
irfpf30 sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpf30pbf sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
irfpf50 sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918