SIHFPF40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFPF40
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 120 nC
Время нарастания (tr): 36 ns
Выходная емкость (Cd): 180 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm
Тип корпуса: TO-247AC
SIHFPF40 Datasheet (PDF)
irfpf40 sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf40pbf sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf40 sihfpf40.pdf
IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian
irfpf50 sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
irfpf30 sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpf30pbf sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
irfpf50 sihfpf50.pdf
IRFPF50, SiHFPF50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.6RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 200COMPLIANT Fast SwitchingQgs (nC) 24 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compli
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
