Справочник MOSFET. SIHLIZ14G

 

SIHLIZ14G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHLIZ14G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO-220FP

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SIHLIZ14G Datasheet (PDF)

 ..1. Size:1637K  vishay
 irliz14g sihliz14g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ14G, SiHLIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.20f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate DriveQgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 6.

 ..2. Size:1638K  vishay
 irliz14gpbf sihliz14g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ14G, SiHLIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.20f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate DriveQgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 6.

 8.1. Size:1637K  vishay
 irliz34g sihliz34g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 8.2. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 8.3. Size:1697K  vishay
 sihliz24g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ24G, SiHLIZ24GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 5.0 V 0.10f = 60 Hz)COMPLIANT Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 4.5 Logic-Level Gate DriveQgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Fast

 8.4. Size:1741K  vishay
 sihliz44g.pdf

SIHLIZ14G SIHLIZ14G

IRLIZ44G, SiHLIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 5 V 0.028f = 60 Hz)COMPLIANT Qg (Max.) (nC) 66 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 12 Logic-Level Gate DriveQgd (nC) 43 RDS(on) Specified at VGS = 4 V and 5 VConfigurat

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