AFP3403 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFP3403
Маркировка: 03*
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.4 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.125 Ohm
Тип корпуса: SOT-23
AFP3403 Datasheet (PDF)
afp3403.pdf
AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m@VGS=-2.5V These devices are particularly suited fo
afp3403a.pdf
AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m@VGS=-2.5V These devices are particularly suited fo
afp3405.pdf
AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
afp3407as.pdf
AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
afp3401as.pdf
AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105@VGS=-2.5V These devices are particularly suited for lo
afp3407s.pdf
AFP3407S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp3401s.pdf
AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m@VGS=-2.5V These devices are particularly suited fo
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
