AFP3403 MOSFET Datasheet: P-Ch, 30V, 3A. Full specification with pinout and replacement list

AFP3403 Specs and Replacement

   Type Designator: AFP3403
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT-23

AFP3403 substitution

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AFP3403 datasheet

..1. Size:565K alfa-mos
afp3403.pdf pdf_icon

AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V These devices are particularly suited fo... See More ⇒

0.1. Size:697K alfa-mos
afp3403a.pdf pdf_icon

AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m @VGS=-2.5V These devices are particularly suited fo... See More ⇒

8.1. Size:462K alfa-mos
afp3405.pdf pdf_icon

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

8.2. Size:662K alfa-mos
afp3407as.pdf pdf_icon

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒