AFP4925 - параметры транзистора MOSFET, его аналоги, datasheet

AFP4925 Datasheet (PDF)

..1. Size:499K alfa-mos
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AFP4925 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=28m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=37m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

0.1. Size:589K alfa-mos
afp4925s.pdf pdf_icon

AFP4925S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925S, P-Channel enhancement mode -30V/ -7.5A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

0.2. Size:564K alfa-mos
afp4925w.pdf pdf_icon

AFP4925W Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925W, P-Channel enhancement mode -30V/ -7.2A,RDS(ON)=30m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -5.8A,RDS(ON)=36m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

0.3. Size:589K alfa-mos
afp4925ws.pdf pdf_icon

AFP4925WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4925WS, P-Channel enhancement mode -30V/ -8.0A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -6.0A,RDS(ON)=26m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .