IRFB3077GPBF - аналоги, даташиты, параметры транзистора

IRFB3077GPBF Datasheet (PDF)

..1. Size:291K international rectifier
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PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P

6.1. Size:295K international rectifier
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PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

6.2. Size:1055K cn minos
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80V N-Channel Power MOSFETDESCRIPTIONThe IRFB3077 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 200A R

6.3. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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