All MOSFET. IRFB3077GPBF Datasheet

 

IRFB3077GPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFB3077GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 370 W
   Maximum Drain-Source Voltage |Vds|: 75 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 160 nC
   Rise Time (tr): 87 nS
   Drain-Source Capacitance (Cd): 820 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm
   Package: TO-220AB

 IRFB3077GPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB3077GPBF Datasheet (PDF)

 ..1. Size:291K  international rectifier
irfb3077gpbf.pdf

IRFB3077GPBF
IRFB3077GPBF

PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P

 6.1. Size:295K  international rectifier
irfb3077pbf.pdf

IRFB3077GPBF
IRFB3077GPBF

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

 6.2. Size:295K  infineon
irfb3077pbf.pdf

IRFB3077GPBF
IRFB3077GPBF

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

 6.3. Size:246K  inchange semiconductor
irfb3077.pdf

IRFB3077GPBF
IRFB3077GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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