All MOSFET. IRFB3077GPBF Datasheet

 

IRFB3077GPBF Datasheet and Replacement


   Type Designator: IRFB3077GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220AB
 

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IRFB3077GPBF Datasheet (PDF)

 ..1. Size:291K  international rectifier
irfb3077gpbf.pdf pdf_icon

IRFB3077GPBF

PD - 96200IRFB3077GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuits max. 3.3mBenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dtID (P

 6.1. Size:295K  international rectifier
irfb3077pbf.pdf pdf_icon

IRFB3077GPBF

PD - 97047BIRFB3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m:l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-220ID (Silicon Limited)210A cl Improved Gate, Avalanche and Dynamic dV/

 6.2. Size:246K  inchange semiconductor
irfb3077.pdf pdf_icon

IRFB3077GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3077IIRFB3077FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.1. Size:245K  international rectifier
irfb3006pbf.pdf pdf_icon

IRFB3077GPBF

IRFB3006PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous RectificationRDS(on) typ.2.1m in SMPSl Uninterruptible Power Supply max. 2.5ml High Speed Power SwitchingGID (Silicon Limited) 270A l Hard Switched and High Frequency CircuitsID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and DynamicDdV/dt Ruggednessl Full

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IRFB3077GPBF MOSFET datasheet

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