IRFB33N15DPBF - описание и поиск аналогов

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15D FEATURES Static drain-source on-resistance RDS(on) 56m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Rugged

PD - 96212A IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. l Hard Switched and High Frequency Circuits 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits S ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Rugg

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av

PD - 97214D IRFB3307ZPbF IRFS3307ZPbF Applications IRFSL3307ZPbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 75V l Hard Switched and High Frequency Circuits RDS(on) typ. 4.6m max. 5.8m G ID (Silicon Limited) 128A Benefits ID (Package Limited) 120A S l Improved Gate, Av

IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A Benefits ID (Package Limited) 120A S l Improved Gate, Avalanche and Dynamic dV/

PD - 95706C IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply l High Speed Power Switching RDS(on) typ. 5.0m l Hard Switched and High Frequency Circuits G max. 6.3m ID 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterize

isc N-Channel MOSFET Transistor IRFB3306 IIRFB3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High efficiency synchronous rectification in SMPS Uninterrruptible power supply High speed pow

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307Z FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3307 IIRFB3307 FEATURES Static drain-source on-resistance RDS(on) 6.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU