IRFB33N15DPBF PDF and Equivalents Search

 

IRFB33N15DPBF Specs and Replacement


   Type Designator: IRFB33N15DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO-220AB
 

 IRFB33N15DPBF substitution

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IRFB33N15DPBF datasheet

 ..1. Size:279K  international rectifier
irfb33n15dpbf irfs33n15dpbf irfsl33n15dpbf.pdf pdf_icon

IRFB33N15DPBF

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc... See More ⇒

 ..2. Size:279K  international rectifier
irfb33n15dpbf irfs33n15dpbf.pdf pdf_icon

IRFB33N15DPBF

PD- 95537 IRFB33N15DPbF IRFS33N15DPbF SMPS MOSFET IRFSL33N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.056 33A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc... See More ⇒

 4.1. Size:142K  international rectifier
irfb33n15d irfs33n15d irfsl33n15d.pdf pdf_icon

IRFB33N15DPBF

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T... See More ⇒

 4.2. Size:245K  inchange semiconductor
irfb33n15d.pdf pdf_icon

IRFB33N15DPBF

isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15D FEATURES Static drain-source on-resistance RDS(on) 56m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

Detailed specifications: IRFB3206PBF , IRFB3207PBF , IRFB3207ZGPBF , IRFB3207ZPBF , IRFB3306GPBF , IRFB3306PBF , IRFB3307PBF , IRFB3307ZPBF , IRFP260 , IRFB3407ZPBF , IRFB3507PBF , IRFB3607GPBF , IRFB3607PBF , IRFB3806PBF , IRFB38N20DPBF , IRFB4019PBF , IRFB4020PBF .

Keywords - IRFB33N15DPBF MOSFET specs

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