IRFB4115GPBF datasheet, аналоги, основные параметры

Наименование производителя: IRFB4115GPBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 380 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 104 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 73 ns

Cossⓘ - Выходная емкость: 490 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для IRFB4115GPBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFB4115GPBF даташит

 ..1. Size:312K  international rectifier
 irfb4115gpbf.pdf pdf_icon

IRFB4115GPBF

PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

 5.1. Size:245K  inchange semiconductor
 irfb4115g.pdf pdf_icon

IRFB4115GPBF

isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU

 6.1. Size:336K  international rectifier
 irfb4115pbf.pdf pdf_icon

IRFB4115GPBF

IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita

 6.2. Size:245K  inchange semiconductor
 irfb4115.pdf pdf_icon

IRFB4115GPBF

isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

ПОКАЗАТЬ ЕЩЁ

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