IRFB4115GPBF Datasheet. Specs and Replacement

Type Designator: IRFB4115GPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220AB

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IRFB4115GPBF substitution

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IRFB4115GPBF datasheet

 ..1. Size:312K  international rectifier
 irfb4115gpbf.pdf pdf_icon

IRFB4115GPBF

PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize... See More ⇒

 5.1. Size:245K  inchange semiconductor
 irfb4115g.pdf pdf_icon

IRFB4115GPBF

isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU... See More ⇒

 6.1. Size:336K  international rectifier
 irfb4115pbf.pdf pdf_icon

IRFB4115GPBF

IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita... See More ⇒

 6.2. Size:245K  inchange semiconductor
 irfb4115.pdf pdf_icon

IRFB4115GPBF

isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM ... See More ⇒

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Detailed specifications: IRFB3607GPBF, IRFB3607PBF, IRFB3806PBF, IRFB38N20DPBF, IRFB4019PBF, IRFB4020PBF, IRFB4110GPBF, IRFB4110PBF, RFP50N06, IRFB4115PBF, IRFB4127PBF, IRFB4137PBF, IRFB41N15DPBF, IRFB4212PBF, IRFB4215, IRFB4215PBF, IRFB4227PBF

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