IRFB4115GPBF MOSFET Datasheet: N-Ch, 150V, 104A. Full specification with pinout and replacement list

IRFB4115GPBF Specs and Replacement

Type Designator: IRFB4115GPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 490 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220AB

IRFB4115GPBF substitution

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IRFB4115GPBF datasheet

..1. Size:312K international rectifier
irfb4115gpbf.pdf pdf_icon

PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize... See More ⇒

5.1. Size:245K inchange semiconductor
irfb4115g.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU... See More ⇒

6.1. Size:336K international rectifier
irfb4115pbf.pdf pdf_icon

IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita... See More ⇒

6.2. Size:245K inchange semiconductor
irfb4115.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: IRFB3607GPBF , IRFB3607PBF , IRFB3806PBF , IRFB38N20DPBF , IRFB4019PBF , IRFB4020PBF , IRFB4110GPBF , IRFB4110PBF , AON6380 , IRFB4115PBF , IRFB4127PBF , IRFB4137PBF , IRFB41N15DPBF , IRFB4212PBF , IRFB4215 , IRFB4215PBF , IRFB4227PBF .