Справочник MOSFET. AM2359P

 

AM2359P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM2359P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.381 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для AM2359P

 

 

AM2359P Datasheet (PDF)

 ..1. Size:289K  analog power
 am2359p.pdf

AM2359P AM2359P

Analog Power AM2359PP-Channel -60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)381 @ VGS = -10V -1.6 Low thermal impedance -60561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 0.1. Size:287K  analog power
 am2359pe.pdf

AM2359P AM2359P

Analog Power AM2359PEP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -1.2 Low thermal impedance -60800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

 9.1. Size:288K  analog power
 am2358n.pdf

AM2359P AM2359P

Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:165K  analog power
 am2358ne.pdf

AM2359P AM2359P

Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc

 9.3. Size:1271K  cn vbsemi
 am2358n-t1.pdf

AM2359P AM2359P

AM2358N-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

 9.4. Size:2357K  cn vbsemi
 am2358ne.pdf

AM2359P AM2359P

AM2358NEwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

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