AM2359P MOSFET Datasheet: P-Ch, 60V, 1.6A. Full specification with pinout and replacement list

AM2359P Specs and Replacement

   Type Designator: AM2359P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.381 Ohm
   Package: SOT-23

AM2359P substitution

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AM2359P datasheet

..1. Size:289K analog power
am2359p.pdf pdf_icon

Analog Power AM2359P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 381 @ VGS = -10V -1.6 Low thermal impedance -60 561 @ VGS = -4.5V -1.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX... See More ⇒

0.1. Size:287K analog power
am2359pe.pdf pdf_icon

Analog Power AM2359PE P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 700 @ VGS = -10V -1.2 Low thermal impedance -60 800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA... See More ⇒

9.1. Size:288K analog power
am2358n.pdf pdf_icon

Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.1 Low thermal impedance 60 107 @ VGS = 4.5V 2.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM ... See More ⇒

9.2. Size:165K analog power
am2358ne.pdf pdf_icon

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc... See More ⇒