AM2359P MOSFET. Datasheet pdf. Equivalent
Type Designator: AM2359P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 31 pF
Maximum Drain-Source On-State Resistance (Rds): 0.381 Ohm
Package: SOT-23
AM2359P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM2359P Datasheet (PDF)
1.1. am2359p.pdf 
Size:289K _upd-mosfet
Analog Power AM2359P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 381 @ VGS = -10V -1.6 • Low thermal impedance -60 561 @ VGS = -4.5V -1.3 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAX
1.2. am2359pe.pdf Size:287K _upd-mosfet
Analog Power AM2359PE P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 700 @ VGS = -10V -1.2 • Low thermal impedance -60 800 @ VGS = -4.5V -1.1 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MA
5.1. am2358n.pdf Size:288K _upd-mosfet
Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 92 @ VGS = 10V 3.1 • Low thermal impedance 60 107 @ VGS = 4.5V 2.9 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
5.2. am2358ne.pdf Size:165K _upd-mosfet
Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (Ω)ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc
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