All MOSFET. AM2359P Datasheet

 

AM2359P MOSFET. Datasheet pdf. Equivalent

Type Designator: AM2359P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 1.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 31 pF

Maximum Drain-Source On-State Resistance (Rds): 0.381 Ohm

Package: SOT-23

AM2359P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM2359P Datasheet (PDF)

1.1. am2359p.pdf Size:289K _upd-mosfet

AM2359P
AM2359P

Analog Power AM2359P P-Channel -60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 381 @ VGS = -10V -1.6 • Low thermal impedance -60 561 @ VGS = -4.5V -1.3 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAX

1.2. am2359pe.pdf Size:287K _upd-mosfet

AM2359P
AM2359P

Analog Power AM2359PE P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 700 @ VGS = -10V -1.2 • Low thermal impedance -60 800 @ VGS = -4.5V -1.1 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MA

 5.1. am2358n.pdf Size:288K _upd-mosfet

AM2359P
AM2359P

Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 92 @ VGS = 10V 3.1 • Low thermal impedance 60 107 @ VGS = 4.5V 2.9 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

5.2. am2358ne.pdf Size:165K _upd-mosfet

AM2359P
AM2359P

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (Ω)ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc

Datasheet: AM2343P , AM2343PE , AM2344N , AM2345P , AM2345PE , AM2347P , AM2358N , AM2358NE , IRF510 , AM2359PE , AM2360N , AM2361P , AM2362N , AM2370N , AM2371P , AM2372N , AM2373P .

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