IRFH5210PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFH5210PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 40 nC
trⓘ - Время нарастания: 9.7 ns
Cossⓘ - Выходная емкость: 260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0149 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для IRFH5210PBF
IRFH5210PBF Datasheet (PDF)
irfh5210pbf.pdf
PD - 97490AIRFH5210PbFHEXFET Power MOSFETVDS100 VRDS(on) max 14.9 m(@VGS = 10V)Qg (typical)40nCRG (typical)1.7ID 55 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 14.9m
irfh5215pbf.pdf
IRFH5215PbFHEXFET Power MOSFETVDS150 VRDS(on) max 58 m(@VGS = 10V)Qg (typical)21nCRG (typical)2.3ID PQFN 5X6 mm27 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh5215pbf.pdf
IRFH5215PbFHEXFET Power MOSFETVDS150 VRDS(on) max 58 m(@VGS = 10V)Qg (typical)21nCRG (typical)2.3ID PQFN 5X6 mm27 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh5206pbf.pdf
PD -97466IRFH5206PbFHEXFET Power MOSFETVDS60 VRDS(on) max 6.7 m(@VGS = 10V)Qg (typical) 40nCRG (typical) 1.7ID 89 A(@Tc(Bottom) = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 7.0m at Vgs=10V) L
irfh5250pbf.pdf
PD -96265IRFH5250PbFHEXFET Power MOSFETVDS25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical)52 nCRG (typical)1.3ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5255pbf.pdf
PD -96289IRFH5255PbFHEXFET Power MOSFETVDS25 VRDS(on) max 6.0 m(@VGS = 10V)Qg (typical)7.0 nCRG (typical)0.6 ID PQFN 5X6 mm51 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high Frequency Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7nC) Lower Switching LossesLow Rg (typical 0.6) Lower Switching Losses
irfh5220pbf.pdf
IRFH5220PbFHEXFET Power MOSFETVDS200 VRDS(on) max 99.9 m(@VGS = 10V)Qg (typical)20nCRG (typical)2.3ID 20 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction Losses
irfh5250dpbf.pdf
IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5204pbf.pdf
IRFH5204PbFHEXFET Power MOSFETVDS40 VRDS(on) max 4.3 m(@VGS = 10V)Qg (typical)43nCRG (typical)1.7ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeaturesBenefitsLow RDSon (
irfh5207pbf.pdf
PD -96298IRFH5207PbFHEXFET Power MOSFETVDS75 VRDS(on) max 9.6 m(@VGS = 10V)Qg (typical)39nCRG (typical)1.7ID PQFN 5X6 mm71 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeaturesBenefitsLow RDSon (
irfh5250pbf.pdf
IRFH5250PbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical) 52 nCRG (typical) 1.3 ID 100 APQFN 5X6 mm(@Tmb = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5250dpbf.pdf
IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918