3N150S datasheet, подбор замены

 ..1. Size:262K  inchange semiconductor
 3n150s.pdf 

isc N-Channel MOSFET Transistor 3N150S FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE

 9.1. Size:672K  st
 stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf 

STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Features TAB VDS RDS(on) max. ID PTOT Order codes 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 2.5 A STP3N150 140 W TAB STW3N150 3 3 100% avalanche tested 2 2 1 1 TO-220

 9.2. Size:1056K  st
 sth3n150-2.pdf 

STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max. ID PTOT 1 1 1 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 1500 V 9 2.5 A TO-3PF STP3N150 140 W TAB STW3N150 100% avalanche tested 3 3

 9.3. Size:759K  st
 stfw3n150 stp3n150 stw3n150.pdf 

STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features RDS(on) Type VDSS ID PTOT max. STFW3N150 1500 V

 9.4. Size:152K  ixys
 ixth3n150.pdf 

High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr

 9.5. Size:113K  ixys
 ixtj3n150.pdf 

Advance Technical Information High Voltage VDSS = 1500V IXTJ3N150 ID25 = 2.3A Power MOSFET RDS(on) 8.0 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G

 9.6. Size:142K  ixys
 ixta3n150hv.pdf 

Preliminary Technical Information High Voltage VDSS = 1500V IXTA3N150HV ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Transi

 9.7. Size:399K  onsemi
 ndtl03n150c ndtl03n150cg.pdf 

Ordering number ENA2235 NDTL03N150C N-Channel Power MOSFET http //onsemi.com 1500V, 2.5A, 10.5 , TO-3P-3L Features On-resistance RDS(on)=8 (typ.) Input Capacitance Ciss=650pF(typ.) 10V drive Specifications TO-3P-3L Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 1500 V Gate to Source Voltage

 9.8. Size:371K  onsemi
 ndfp03n150c ndfp03n150cg.pdf 

Ordering number ENA2232 NDFP03N150C N-Channel Power MOSFET http //onsemi.com 1500V, 2.5A, 10.5 , TO-220F-3FS Features On-resistance RDS(on)=8 (typ.) Input Capacitance Ciss=650pF(typ.) 10V drive Specifications TO-220F-3FS Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 1500 V Gate to Source Vo

 9.9. Size:262K  onsemi
 ndul03n150c.pdf 

Ordering number ENA2218 NDUL03N150C N-Channel Power MOSFET http //onsemi.com 1500V, 2.5A, 10.5 , TO-3PF-3L Features ON-resistance RDS(on)=8 (typ.) Input capacitance Ciss=650pF (typ.) 10V drive TO-3PF-3L Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 1500 V Gate to Source Voltage VGSS

 9.10. Size:173K  onsemi
 ndul03n150c ndul03n150cg.pdf 

Ordering number ENA2218 NDUL03N150C N-Channel Power MOSFET http //onsemi.com 1500V, 2.5A, 10.5 , TO-3PF-3L Features ON-resistance RDS(on)=8 (typ.) Input capacitance Ciss=650pF (typ.) 10V drive TO-3PF-3L Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 1500 V Gate to Source Voltage VGSS

 9.11. Size:443K  crhj
 cs3n150ahr.pdf 

Silicon N-Channel Power MOSFET R CS3N150 AHR General Description VDSS 1500 V CS3N150 AHR, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.12. Size:1306K  belling
 bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf 

BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.13. Size:1306K  belling
 bl3n150.pdf 

BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.14. Size:767K  jiaensemi
 jffm3n150c.pdf 

JFFM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

 9.15. Size:1362K  jiaensemi
 jfqm3n150c.pdf 

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

 9.16. Size:627K  ncepower
 nce3n150t.pdf 

NCE3N150T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 9.17. Size:619K  ncepower
 nce3n150d.pdf 

NCE3N150D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 9.18. Size:608K  ncepower
 nce3n150f.pdf 

NCE3N150F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 9.19. Size:648K  ncepower
 nce3n150pf.pdf 

NCE3N150PF N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched application

 9.20. Size:638K  ncepower
 nce3n150.pdf 

NCE3N150 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 9.21. Size:12591K  pipsemi
 pth03n150 pta03n150.pdf 

PTH03N150 PTA03N150 1500V N-ch High Planar MOSFET General Features RoHS Compliant RDS(ON),typ.=5.4 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D SMPS Standby Power S Ordering Information TO-220F TO-3PF Part Number Package Brand Package No to Scale PTH03N150 TO-3PF PTA03N150 TO-220F

 9.22. Size:617K  convert
 cs3n150f cs3n150w cs3n150vf.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N150F,CS3N150W,CS3N150VF 1500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N150F TO-220F CS

 9.23. Size:1342K  tokmas
 cim3n150.pdf 

1500V N-Channel MOSFET V N CIM3N150 General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching G performance, and withstand high energy pulse in the D S avalanche and commutation mode. TO-247-3 These devices can be used in var

 9.24. Size:492K  cn sino-ic
 se3n150p.pdf 

Oct 2014 SE3N150P N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, V = 1500V DS such as fast switching time, low gate charge, R =6 @ V =10V DS(ON) GS low on-state resistance and have a high rugged avalanche characteristics Pin configura

 9.25. Size:422K  cn hmsemi
 hm3n150f.pdf 

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

 9.26. Size:358K  cn hmsemi
 hm3n150a.pdf 

General Description VDSS 1500 V HM3N150A the silicon N-channel Enhanced ID 3 A PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.27. Size:7602K  cn scilicon
 sfp073n150c3 sfb070n150c3.pdf 

SFP073N150C3,SFB070N150C3 N-MOSFET 150V, 6.2m , 140A Feature Product Summary High Speed Power Switching VDS 150V Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness RDS(on) typ. 6.2m 100% EAS Tested,100% DC Tested ID 140A Lead Free Application 100% DVDS Tested Synchronous Rectification in SMPS 100% Avalanche Tested Hard Switchin

 9.28. Size:3129K  cn scilicon
 sfp133n150ac2 sfb130n150ac2.pdf 

SFP133N150AC2, SFB130N150AC2 N-MOSFET 150V, 12.5m , 120A Features Product Summary Enhancement Mode VDS 150V Very Low On-Resistance RDS(on) 12.5m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Test

 9.29. Size:6396K  cn scilicon
 sfp046n150c3 sfb043n150c3 sfw043n150c3.pdf 

SFP046N150C3,SFB043N150C3,SFW043N150C3 N-MOSFET 150V, 3.9m Product Summary Features High Speed Power Smooth Switching VDS 150V Enhanced Body diode dv/dt capability RDS(on) typ. 3.9m Enhanced Avalanche Ruggedness I R 206A D (Sillicon Limited) Applications 100% DVDS Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit 100% Avala

 9.30. Size:693K  cn minos
 mpf3n150.pdf 

 9.31. Size:255K  inchange semiconductor
 ish3n150.pdf 

isc N-Channel MOSFET Transistor ISH3N150 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V 1500V(Min) DSS Static Drain-Source On-Resistance R

 9.32. Size:262K  inchange semiconductor
 stp3n150.pdf 

isc N-Channel MOSFET Transistor STP3N150 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS