STP10NK50Z
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STP10NK50Z
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 9
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 17
ns
Cossⓘ - Выходная емкость: 159
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.7
Ohm
Тип корпуса:
TO-220
Аналог (замена) для STP10NK50Z
-
подбор ⓘ MOSFET транзистора по параметрам
STP10NK50Z
Datasheet (PDF)
..1. Size:503K st
stp10nk50z.pdf 

STP10NK50ZN-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 packageDatasheet obsolete productFeaturesOrder code VDSS RDS(on) max ID PTOTTABSTP10NK50Z 500 V
..2. Size:528K st
stp10nk50z stf10nk50z.pdf 

STP10NK50ZSTF10NK50ZN-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FPZener-Protected SuperMESHMOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP10NK50Z 500 V
7.1. Size:384K st
stp10nk70z.pdf 

STP10NK70ZSTP10NK70ZFPN-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FPZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK70Z 700 V
7.2. Size:455K st
stp10nk80zfp stp10nk80z stw10nk80z.pdf 

STP10NK80ZFPSTP10NK80Z - STW10NK80ZN-channel 800V - 0.78 - 9A - TO-220/FP-TO-247Zener-protected superMESHTM MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP10NK80Z 800V
7.3. Size:439K st
stp10nk80z stp10nk80zfp stw10nk80z.pdf 

STP10NK80Z, STP10NK80ZFP,STW10NK80ZN-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packagesDatasheet production dataFeaturesTABType VDSS RDS(on) ID PwSTP10NK80Z 800V
7.4. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf 

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V
7.5. Size:458K st
stp10nk80z.pdf 

STP10NK80Z - STP10NK80ZFPSTW10NK80ZN-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK80Z 800 V
7.6. Size:274K st
stp10nk70zfp stp10nk70z.pdf 

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V
7.7. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf 

STB10NK60Z, STP10NK60ZSTW10NK60ZN-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFETZener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247FeaturesRDS(on) Type VDSS ID Pwmax3STB10NK60Z-1 600 V
7.8. Size:280K st
stp10nk70z stp10nk70zfp.pdf 

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V
7.9. Size:684K st
stp10nk60z.pdf 

STP10NK60Z/FP, STB10NK60Z/-1STW10NK60ZN-CHANNEL 600V-0.65-10A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK60Z 600 V
7.10. Size:938K st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf 

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V
7.11. Size:201K inchange semiconductor
stp10nk60zfp.pdf 

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NK60ZFPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN
7.12. Size:253K inchange semiconductor
stp10nk70zfp.pdf 

isc N-Channel MOSFET Transistor STP10NK70ZFPFEATURESDrain Current : I = 8.6A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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