STP310N10F7 - Даташиты. Аналоги. Основные параметры

STP310N10F7N-channel 100 V, 2.3 m typ., 180 A STripFET VII DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTP310N10F7 100 V 2.7 m 180 A Ultra low on-resistance 100% avalanche tested321ApplicationsTO-220 Switching applicationsDescriptionFigure 1. Internal schematic diagramThis de

STB31N65M5, STF31N65M5STP31N65M5, STW31N65M5DatasheetN-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO220FP, TO220 and TO-247 packagesFeaturesTABVDS @ TJMAX RDS(on ) max. IDOrder code Package3132STB31N65M5D2PAKD PAK 21TO-220FPSTF31N65M5 TO-220FPTAB710 V 0.148 22 ASTP31N65M5 TO-220STW31N65M5 TO-247332TO-220 2TO-24

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDSS @ TJmax RDS(on) max ID231STB31N65M53TAB 2D2PAK1STF31N65M5TO-220FPSTFI31N65M5 710 V

STP315N10F7Automotive-grade N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTP315N10F7 100 V 2.7 m 180 A Designed for automotive applications and AEC-Q101 qualified32 Among the lowest RDS(on) on the market1 Excellent figure of merit (FoM)TO-220

isc N-Channel MOSFET Transistor STP315N10F7FEATURESDrain Current : I = 180A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s