STP9527 datasheet, подбор замены

 ..1. Size:1095K  stansontech
 stp9527.pdf 

STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management a

 ..2. Size:891K  cn vbsemi
 stp9527.pdf 

STP9527 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1 8

 9.1. Size:760K  st
 std95n4f3 stp95n4f3.pdf 

STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 m , 80 A, DPAK, TO-220 STripFET III Power MOSFET Features RDS(on) Type VDSS ID Pw max STD95N4F3 40 V

 9.2. Size:613K  st
 std95n2lh5 stp95n2lh5 stu95n2lh5.pdf 

STD95N2LH5 STP95N2LH5, STU95N2LH5 N-channel 25 V, 0.0038 , 80 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID 3 3 STD95N2LH5 25 V

 9.3. Size:344K  st
 std95n04 std95n04 stp95n04 stp95n04.pdf 

STD95N04 STP95N04 N-channel 40V - 5.4m - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID Pw STD95N04 40V

 9.4. Size:933K  st
 stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf 

STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID 3 1 3 STB95N3LLH6 30 V 0.0042 80 A 2 DPAK 1 STD95N3LLH6 30 V 0.0042 80 A STP95N3LLH6 30 V 0.0042 80 A IPAK STU95N3LLH6 30 V 0.0047 80 A RDS(on) * Qg industry benchmark 3

 9.5. Size:375K  stansontech
 stp9547.pdf 

STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and