IRFR420APBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFR420APBF Datasheet (PDF)

..1. Size:248K international rectifier
irfr420apbf irfu420apbf.pdf pdf_icon

PD - 95075ASMPS MOSFETIRFR420APbFIRFU420APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 3.0 3.3Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitanc

..2. Size:265K vishay
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf pdf_icon

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

6.1. Size:114K international rectifier
irfr420a.pdf pdf_icon

PD - 94355SMPS MOSFETIRFR420AIRFU420AApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyVDSS RDS(on) max ID High speed power switching500V 3.0 3.3ABenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD-Pak I-PakAvalan

6.2. Size:500K samsung
irfr420a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char