Справочник MOSFET. IRFR420APBF

 

IRFR420APBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR420APBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 53 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IRFR420APBF

 

 

IRFR420APBF Datasheet (PDF)

 ..1. Size:248K  international rectifier
 irfr420apbf irfu420apbf.pdf

IRFR420APBF IRFR420APBF

PD - 95075ASMPS MOSFETIRFR420APbFIRFU420APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 3.0 3.3Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitanc

 ..2. Size:265K  vishay
 irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf

IRFR420APBF IRFR420APBF

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

 6.1. Size:114K  international rectifier
 irfr420a.pdf

IRFR420APBF IRFR420APBF

PD - 94355SMPS MOSFETIRFR420AIRFU420AApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyVDSS RDS(on) max ID High speed power switching500V 3.0 3.3ABenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andD-Pak I-PakAvalan

 6.2. Size:500K  samsung
 irfr420a.pdf

IRFR420APBF IRFR420APBF

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 6.3. Size:241K  vishay
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420APBF IRFR420APBF

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

 6.4. Size:251K  infineon
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420APBF IRFR420APBF

IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5

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