STB20N65M5
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: STB20N65M5
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 130
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 18
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 7.5
ns
Cossⓘ - Выходная емкость: 38
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19
Ohm
Тип корпуса:
D2PAK
- подбор MOSFET транзистора по параметрам
STB20N65M5
Datasheet (PDF)
..1. Size:1169K st
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf 

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32
8.1. Size:442K st
stb20nm60-1 stb20nm60t4.pdf 

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
8.3. Size:286K st
stb20nm60d.pdf 

STB20NM60DN-channel 600V - 0.26 - 20A - D2PAKFDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB20NM60D 600V
8.4. Size:309K st
stb20nm60a-1 stp20nm60a stf20nm60a.pdf 

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V
8.5. Size:315K st
stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf 

STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V
8.6. Size:1458K st
stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf 

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
8.7. Size:401K st
stb20nm50fd stf20nm50fd stp20nm50fd.pdf 

STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
8.8. Size:428K st
stb20nk50zt4.pdf 

STB20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in DPAK packageDatasheet obsolete productFeatures RDS(on) Type VDSS ID PWmaxSTB20NK50Z 500 V
8.9. Size:396K st
stb20nm50fdt4.pdf 

STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
8.10. Size:444K st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf 

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
8.11. Size:607K st
stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf 

STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V
8.12. Size:393K st
stb20nf06l stf20nf06l stp20nf06l.pdf 

STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V
8.13. Size:1458K st
stb20n95k5.pdf 

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
8.14. Size:287K st
stb20nm50fd.pdf 

STB20NM50FDN-CHANNEL 500V - 0.20 - 20A D2PAKFDmeshPower MOSFET (With FAST DIODE)PRELIMINARY DATATYPE VDSS RDS(on) IDSTB20NM50FD 500V
8.16. Size:356K inchange semiconductor
stb20n95k5.pdf 

isc N-Channel MOSFET Transistor STB20N95K5FEATURESDrain Current : I = 17.5A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 330m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
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History: DMG6301UDW
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