IRFS7530PBF - описание и поиск аналогов

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A

StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications D RDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4m G Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode

isc N-Channel MOSFET Transistor IRFS7530 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4m G Synchronous rectifier applications ID (Silicon Limited) 232A

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit

isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION Drain Current I =232 A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan

isc N-Channel MOSFET Transistor IRFS7537 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S