2SJ506 - описание и поиск аналогов

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PRSS0004ZD-B RENESAS Pac

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-30V D ID =-10 A 0.127 +0.1 0.80-0.1 max RDS(ON) 85m (VGS =-10V) G RDS(ON) 180 (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain Absolute Maximum Ratings Ta

2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ509 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 1.35 (typ.) DS (ON) High forward transfer admittance Y = 0.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -100 V) DS Enhanc

2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ508 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 1.35 (typ.) DS (ON) High forward transfer admittance Y = 0.7 S (typ.) fs Low leakage current IDSS = -100 A (V = -100 V) DS Enhancement-

2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ507 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.5 (typ.) DS (ON) High forward transfer admittance Y = 1.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancem

Ordering number ENN5932 P-Channel Silicon MOSFET 2SJ503 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ503] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ503] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2

Ordering number ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2091A 2.5V drive. [2SJ501] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol C

Ordering number ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2091A 4V drive. [2SJ502] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK (L) ) (Pack

2SJ504 Silicon P Channel MOS FET REJ03G0871-0400 (Previous ADE-208-546B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3.

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