2SJ506 Datasheet. Specs and Replacement

Type Designator: 2SJ506  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: DPAK

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2SJ506 datasheet

 ..1. Size:89K  renesas
2sj506.pdf pdf_icon

2SJ506

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PRSS0004ZD-B RENESAS Pac... See More ⇒

 0.1. Size:102K  renesas
rej03g0873 2sj506lsds.pdf pdf_icon

2SJ506

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:1240K  kexin
2sj506s.pdf pdf_icon

2SJ506

SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-30V D ID =-10 A 0.127 +0.1 0.80-0.1 max RDS(ON) 85m (VGS =-10V) G RDS(ON) 180 (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain Absolute Maximum Ratings Ta... See More ⇒

 9.1. Size:142K  toshiba
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2SJ506

2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ509 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 1.35 (typ.) DS (ON) High forward transfer admittance Y = 0.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -100 V) DS Enhanc... See More ⇒

Detailed specifications: 2SJ471, 2SJ479, 2SJ483, 2SJ484, 2SJ486, 2SJ496, 2SJ504, 2SJ505, MMIS60R580P, 2SJ517, 2SJ518, 2SJ526, 2SJ527, 2SJ528, 2SJ529, 2SJ530, 2SJ531

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.