2SJ506 MOSFET. Datasheet pdf. Equivalent

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Pac

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type MOSFETP-Channel MOSFET2SJ506STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-30VD ID =-10 A0.127+0.10.80-0.1max RDS(ON) 85m (VGS =-10V)G RDS(ON) 180 (VGS =-4V)+ 0.12.3 0.60- 0.1 1 Gate+0.154 .60 -0.15 2 Drain3 SourceS4 Drain Absolute Maximum Ratings Ta

2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ509 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -100 V) DS Enhanc

2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ508 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 A (V = -100 V) DS Enhancement-

2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ507 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.5 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancem

Ordering number:ENN5932P-Channel Silicon MOSFET2SJ503DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ503]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ503]6.5 2.35.0 0.540.50.851 2

Ordering number:ENN5948AP-Channel Silicon MOSFET2SJ501Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SJ501]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

Ordering number:ENN6178AP-Channel Silicon MOSFET2SJ502Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 4V drive.[2SJ502]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Pack

2SJ504 Silicon P Channel MOS FET REJ03G0871-0400 (Previous: ADE-208-546B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG2. Drain3.

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