IRFSL4227PBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFSL4227PBF Datasheet (PDF)

..1. Size:357K international rectifier
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PD - 96131AIRFS4227PbFPDP SWITCHIRFSL4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch

5.1. Size:269K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFSL4227FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Vo

6.1. Size:371K international rectifier
irfs4228pbf irfsl4228pbf.pdf pdf_icon

PD - 97231AIRFS4228PbFPDP SWITCHIRFSL4228PbFFeaturesl Advanced Process Technology Key Parametersl Key Parameters Optimized for PDP VDS min150 V Sustain, Energy Recovery and PassVDS (Avalanche) typ.180 V Switch ApplicationsRDS(ON) typ. @ 10V m12l Low EPULSE Rating to Reduce PowerIRP max @ TC= 100C170 A Dissipation in PDP Sustain, EnergyTJ max175 C Reco

6.2. Size:275K international rectifier
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PD - 96285IRFSL4229PbFFeaturesKey Parametersl Advanced Process TechnologyVDS min250 Vl Low QG for Fast Responsel High Repetitive Peak Current Capability forVDS (Avalanche) typ.300 V Reliable OperationRDS(ON) typ. @ 10V m42l Short Fall & Rise Times for Fast SwitchingIRP max @ TC= 100C91 Al175C Operating Junction Temperature forTJ max175 C Improved Ru

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .