IXFN106N20 - описание и поиск аналогов

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t

HiPerFETTM Power MOSFETs IXFN 100N10S1 VDSS = 100 V IXFN 100N10S2 with Schottky Diodes ID25 = 100 A IXFN 100N10S3 RDS(on) = 15 m m I=_ =C==_ = =pjmpI=mc =C=j = = S2 QEaF QEaF S1 S3 QEaF PEhF NEdF NEdF NEdF PE^F OEpF OEpF OIPEpF Symbol Test Conditions Maximum Rati

Advanced Technical Information HiPerFETTM IXFN 100N25 VDSS = 250 V ID25 = 100 A Power MOSFETs Single MOSFET Die RDS(on) = 27 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 250 V G VGS Continuous 20 V

IXFN 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 90 A Power MOSFET RDS(on) 49 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M 500