IXFR80N20Q - аналоги, параметры транзистора - Справочник транзисторов

IXFR80N20Q даташит

..1. Size:34K ixys
ixfr80n20q.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 80N20Q VDSS = 200 V ISOPLUS247TM, Q-Class ID25 = 71 A (Electrically Isolated Back Surface) RDS(on) = 28mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V VGS Continuous

7.1. Size:149K ixys
ixfr80n50p.pdf pdf_icon

PolarHVTM HiPerFET IXFR 80N50P VDSS = 500 V Power MOSFET ID25 = 45 A ISOPLUS247TM RDS(on) 72 m trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS247 (IXFR) VDGR TJ = 25 C to

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ixfr80n10q.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 80N10Q VDSS = 100 V ISOPLUS247TM, Q-Class ID25 = 76 A (Electrically Isolated Back Surface) RDS(on) = 15 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Cont

Другие MOSFET... IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , IXFR55N50 , IXFR58N20Q , AON7408 , IXFT10N100 , IXFT12N100 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IXFT15N100 , IXFT15N80Q , IXFT20N60Q .