SQ3410EV - параметры транзистора MOSFET, его аналоги, datasheet

SQ3410EV Datasheet (PDF)

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SQ3410EVwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0175 Material categorization:RDS(on) () at VGS = 4.5 V 0.0213For definitions of compliance please seeID (A) 8www.vishay.com/doc?99912

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Work-In-ProgressSQ3418AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Typical ESD protection 800 VRDS(on) () at VGS = 10 V 0.032 AEC-Q101 qualifieddRDS(on) () at VGS = 4.5 V 0.042 100 % Rg and UIS testedID (A) 8 Material categorization:Configuration Singl

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SQ3418EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.048 Typical ESD Protection 800 VID (A) 8 AEC-Q101 QualifieddConfiguration Single 100 % Rg an

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SQ3419EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.050 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.078 100 % Rg and UIS TestedID (A) - 7.4 Typical ESD Protection 800 V