SQD50P06-15L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQD50P06-15L
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 136 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 98 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 485 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0155 Ohm
Тип корпуса: TO-252
Аналог (замена) для SQD50P06-15L
SQD50P06-15L Datasheet (PDF)
sqd50p06-15l.pdf
SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorization:Configuration
sqd50p06-15l.pdf
SQD50P06-15Lwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet
sqd50p04-09l.pdf
SQD50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0094 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0190 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguratio
sqd50p08-25l.pdf
SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorization:ID (A) - 50For definitions of compliance please see Configuratio
sqd50p08-28.pdf
SQD50P08-28Vishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.028 TrenchFET Power MOSFETID (A) - 48 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedSTO-252 Compliant to RoHS Directive 2002/95/ECGDrain
sqd50p03-07.pdf
SQD50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.007 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.011 Material categorization:ID (A) - 50For definitions of compliance please see Configuration
sqd50p04-13l.pdf
SQD50P04-13Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.022 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration
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