SQJ941EP - параметры транзистора MOSFET, его аналоги, datasheet

SQJ941EP Datasheet (PDF)

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SQJ941EPwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.024 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.039 Material categorization:ID (A) per leg - 8For definitions of compliance please see Conf

9.1. Size:258K vishay
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SQJ942EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL 1 N-CHANNEL 2 AEC-Q101 QualifieddVDS (V) 40 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.022 0.011 Material categorization:RDS(on) () at VGS = 4.5 V 0.026 0.013For definitions of compliance pleas

9.2. Size:260K vishay
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SQJ940EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETsFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL 1 N-CHANNEL 2 AEC-Q101 QualifieddVDS (V) 40 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0160 0.0064 Material categorization:RDS(on) () at VGS = 4.5 V 0.0188 0.0076For definitions of compliance p

9.3. Size:213K vishay
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SQJ946EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.033 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.039 Material categorization:ID (A) per leg 15for definitions of compliance please see Configuratio

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