SRM4N70 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SRM4N70
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.9 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 48 pf
Сопротивление сток-исток открытого транзистора (Rds): 3.23 Ohm
Тип корпуса: TO-251
SRM4N70 Datasheet (PDF)
srm4n70.pdf
Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
srm4n65.pdf
Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n60.pdf
Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
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