SRM4N70 Datasheet. Specs and Replacement

Type Designator: SRM4N70  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.23 Ohm

Package: TO-251

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SRM4N70 datasheet

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SRM4N70

Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70 General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a... See More ⇒

 9.1. Size:305K  sanrise-tech
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SRM4N70

Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65 General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high ... See More ⇒

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SRM4N70

Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60 General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high ... See More ⇒

Detailed specifications: SRM4N60D1, SRM4N60DTR, SRM4N60U, SRM4N60TF, SRM4N65D1, SRM4N65DTR, SRM4N65U, SRM4N65TF, IRFB3206, SRM6N60D1, SRM6N60DTR, SRM6N60TF, SRM6N70, SRM7N60, SRM7N65, SRM7N65D1-E1, SRM7N65DTR-E1

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