ST1005SRG. Аналоги и основные параметры

Наименование производителя: ST1005SRG

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: SOT-23

Аналог (замена) для ST1005SRG

- подборⓘ MOSFET транзистора по параметрам

 

ST1005SRG даташит

 ..1. Size:657K  stansontech
 st1005srg.pdf pdf_icon

ST1005SRG

ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 9.1. Size:67K  philips
 bst100.pdf pdf_icon

ST1005SRG

DISCRETE SEMICONDUCTORS DATA SHEET BST100 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST100 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V T

 9.2. Size:1277K  stansontech
 st1004srg.pdf pdf_icon

ST1005SRG

ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi

 9.3. Size:716K  stansontech
 st1002.pdf pdf_icon

ST1005SRG

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo

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Другие IGBT... SRM7N65TC-E1, SS05N70, SS07N70, SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, IRF1404, ST10E4, ST12N10D, ST13P10, ST2300, ST2300SRG, ST2301A, ST2302, ST2303SRG