ST1005SRG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ST1005SRG
Маркировка: 105YA
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 0.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16 nC
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 110 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: SOT-23
ST1005SRG Datasheet (PDF)
st1005srg.pdf
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ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
bst100.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBST100P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBST100D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel vertical D-MOS transistorDrain-source voltage -VDS max. 60 VT
st1004srg.pdf
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ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi
st1002.pdf
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ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo
jst100n30t2.pdf
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JST100N30T2 30V,100A N-channel MOSFETFeatures Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM ApplicationDS(ON) GS R =4.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate ChargeDS(ON)Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Parameter
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![ST1005SRG](https://alltransistors.com/images/us.png)
![ST1005SRG](https://alltransistors.com/images/es.png)
![ST1005SRG](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C