SUD50N02-04P - параметры транзистора MOSFET, его аналоги, datasheet

SUD50N02-04P Datasheet (PDF)

..1. Size:143K vishay
sud50n02-04p.pdf pdf_icon

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

4.1. Size:65K vishay
sud50n02-06.pdf pdf_icon

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

4.2. Size:58K vishay
sud50n02-09p.pdf pdf_icon

SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn

4.3. Size:158K vishay
sud50n02-06p.pdf pdf_icon

SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .